| PART |
Description |
Maker |
| HKQ0603U2N4B-T |
High-Q Multilayer Chip Inductors for High Frequency Applications (HK series Q type / AQ series)
|
Taiyo Yuden (U.S.A.), Inc
|
| RF2 RF3 RF5 |
Series, High Frequency Power Resistors Thick film,Non-Inductive
|
Willow Technologies Limited
|
| SPW |
Special Purpose, High Frequency Load (Tubes), High Stability and Excellent High Frequency Characteristics, Particularly Suited for High Frequency Applications
|
Vishay
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| KTC2803 |
EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO FREQUENCY HIGH FREQUENCY POWER AMPLIFIER)
|
KEC[KEC(Korea Electronics)]
|
| 201R15C1R0A6T 201R15C1R0AV4T 201R15C1R0B6T 250R15C |
C-SERIES HIGH FREQUENCY CHIP CAPACITORS C系列高频电容
|
Electronic Theatre Controls, Inc.
|
| HK10051N0S-T |
Multilayer Chip Inductors for High Frequency Applications (HK series)
|
Taiyo Yuden (U.S.A.), Inc
|
| PA0801NL PA0803NL PA0802 PA0801NLT PA0805NL PA0807 |
HIGH FREQUENCY PLANAR TRANSFORMERS PA08XXNL Series (up to 140W)
|
Pulse A Technitrol Company
Pulse A Technitrol Comp...
|
| PA0576 PA0526 PA0442 PA0581 |
HIGH FREQUENCY PLANAR TRANSFORMERS Prism Series (up to 250W)
|
Pulse A Technitrol Company
|
| 3VSK1 3VSK111 3VSK3 20VSK6 30VSK6C 3VSK7 3ESK1 3ES |
High Performance K Series RFI Line Filters for SMPS Emission Control
Power Line SK (High Performance) Series
Power Line SK Series
|
Tyco Electronics
TE Connectivity Ltd
|
| FF300R12KS4 FF300R12KS4-13 |
62mm C-series module with the fast IGBT2 for high-frequency switching
|
Infineon Technologies A...
|
| 10CV10AX 10CV100AX 10CV1500AX 10CV2200AX 10CV6800A |
CV-AX Series / Surface Mount Type Low Impedance at High Frequency
|
Sanyo Electronic
|
